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AONR36368 Alpha & Omega Semiconductor

Name: AONR36368
Brand: ALPHA & OMEGA SEMICONDUCTOR
SKU: 459515532-1
Price: 78750 UAH
Availability: BackOrder

Виробник: Alpha & Omega Semiconductor
N-Channel MOSFET

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Технічний опис AONR36368 Alpha & Omega Semiconductor

Description: MOSFET N-CH 30V 23A/32A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 4.1W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V.

Інші пропозиції AONR36368

Назва	Виробник	Інформація	Доступність	Ціна
AONR36368	Виробник : Alpha & Omega Semiconductor	N-Channel MOSFET	товару немає в наявності	В кошику од. на суму грн.
AONR36368	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm Drain-source voltage: 30V Drain current: 32A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 9.6W Polarisation: unipolar Dimensions: 3x3mm Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: DFN8 кількість в упаковці: 5000 шт	товару немає в наявності	В кошику од. на суму грн.
AONR36368	Виробник : Alpha & Omega Semiconductor Inc.	Description: MOSFET N-CH 30V 23A/32A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V	товару немає в наявності	В кошику од. на суму грн.
AONR36368	Виробник : Alpha & Omega Semiconductor Inc.	Description: MOSFET N-CH 30V 23A/32A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V	товару немає в наявності	В кошику од. на суму грн.
AONR36368	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm Drain-source voltage: 30V Drain current: 32A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 9.6W Polarisation: unipolar Dimensions: 3x3mm Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: DFN8	товару немає в наявності	В кошику од. на суму грн.