AONR62818

AONR62818 Alpha & Omega Semiconductor


aonr62818.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 80V 18A 8-Pin DFN EP T/R
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис AONR62818 Alpha & Omega Semiconductor

Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V, Power Dissipation (Max): 4.1W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V.

Інші пропозиції AONR62818

Фото Назва Виробник Інформація Доступність
Ціна
AONR62818 Виробник : Alpha & Omega Semiconductor Inc. AONR62818.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V
Power Dissipation (Max): 4.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.