Технічний опис AONR62921 Alpha & Omega Semiconductor
Description: 100V N CHAN FET SMD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13.5A, 10V, Power Dissipation (Max): 4.1W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 50 V.
Інші пропозиції AONR62921
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AONR62921 | Виробник : Alpha & Omega Semiconductor |
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товару немає в наявності |
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AONR62921 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31.5A Power dissipation: 21.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 10.2mΩ Mounting: SMD Gate charge: 35nC Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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AONR62921 | Виробник : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13.5A, 10V Power Dissipation (Max): 4.1W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 50 V |
товару немає в наявності |
|
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AONR62921 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31.5A Power dissipation: 21.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 10.2mΩ Mounting: SMD Gate charge: 35nC Kind of channel: enhancement |
товару немає в наявності |