AONR66924 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.09 грн |
| 10+ | 54.52 грн |
| 25+ | 45.89 грн |
| 100+ | 33.87 грн |
| 250+ | 29.37 грн |
| 500+ | 26.62 грн |
| 1000+ | 23.93 грн |
| 2500+ | 21.52 грн |
Відгуки про товар
Написати відгук
Технічний опис AONR66924 Alpha & Omega Semiconductor Inc.
Description: N, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN-EP (3x3), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Power Dissipation (Max): 5W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції AONR66924
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
AONR66924 | Alpha & Omega Semiconductor Inc. |
Description: N Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN-EP (3x3) Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| AONR66924 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.