Технічний опис AONS21303C Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 21A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 138W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13240 pF @ 15 V.
Інші пропозиції AONS21303C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
AONS21303C | Виробник : Alpha & Omega Semiconductor |
 30V P Channel MOSFET |
товару немає в наявності |
|
| AONS21303C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
AONS21303C SMD P channel transistors |
товару немає в наявності |
||
 |
AONS21303C | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 21A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13240 pF @ 15 V |
товару немає в наявності |
|
|
|
AONS21303C | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 21A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13240 pF @ 15 V |
товару немає в наявності |