AONS21357 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 21A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.04 грн |
| 6000+ | 17.83 грн |
| 9000+ | 17.08 грн |
| 15000+ | 15.24 грн |
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Технічний опис AONS21357 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 21A/36A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V.
Інші пропозиції AONS21357 за ціною від 15.71 грн до 79.99 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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AONS21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6 Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -36A Drain-source voltage: -30V Gate charge: 25nC On-state resistance: 7.8mΩ Power dissipation: 19W Gate-source voltage: ±25V Case: DFN5x6 Kind of channel: enhancement |
на замовлення 2875 шт: термін постачання 14-30 дні (днів) |
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AONS21357 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 21A/36A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V |
на замовлення 18448 шт: термін постачання 21-31 дні (днів) |
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| AONS21357 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -36A
Drain-source voltage: -30V
Gate charge: 25nC
On-state resistance: 7.8mΩ
Power dissipation: 19W
Gate-source voltage: ±25V
Case: DFN5x6
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -36A
Drain-source voltage: -30V
Gate charge: 25nC
On-state resistance: 7.8mΩ
Power dissipation: 19W
Gate-source voltage: ±25V
Case: DFN5x6
Kind of channel: enhancement
на замовлення 2875 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.32 грн |
| 16+ | 27.67 грн |
| 100+ | 20.28 грн |
| 500+ | 16.79 грн |
| 1000+ | 15.71 грн |
| AONS21357 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 21A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
Description: MOSFET P-CH 30V 21A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
на замовлення 18448 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.99 грн |
| 10+ | 48.24 грн |
| 100+ | 31.66 грн |
| 500+ | 23.01 грн |
| 1000+ | 20.86 грн |