Технічний опис AONS36302 Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 146A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 146A, Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 15 V.
Інші пропозиції AONS36302
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AONS36302 | Виробник : Alpha & Omega Semiconductor |
 30V N Channel MOSFET |
товару немає в наявності |
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AONS36302 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 146A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 146A Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 15 V |
товару немає в наявності |