AONS36316 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 28A/32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 15 V
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 72.85 грн |
| 10+ | 43.90 грн |
| 100+ | 28.58 грн |
| 500+ | 20.61 грн |
| 1000+ | 18.61 грн |
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Технічний опис AONS36316 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 28A/32A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 26W (Tc), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 15 V.
Інші пропозиції AONS36316
| Фото | Назва | Виробник | Інформація |
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AONS36316 | Виробник : Alpha & Omega Semiconductor |
30V N-Channel MOSFET |
товару немає в наявності |
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AONS36316 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 28A/32A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 15 V |
товару немає в наявності |
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AONS36316 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 5W; DFN8 Case: DFN8 Kind of channel: enhancement Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 42nC On-state resistance: 4.1mΩ Power dissipation: 5W Gate-source voltage: ±12V Drain current: 28A Drain-source voltage: 30V |
товару немає в наявності |