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AONS62618 ALPHA & OMEGA SEMICONDUCTOR
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 22W; DFN5x6
Mounting: SMD
Drain-source voltage: 60V
Drain current: 44A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 22W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
кількість в упаковці: 1 шт
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Технічний опис AONS62618 ALPHA & OMEGA SEMICONDUCTOR
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V.
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AONS62618 | Виробник : Alpha & Omega Semiconductor |
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товар відсутній |
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AONS62618 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V |
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AONS62618 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 22W; DFN5x6 Mounting: SMD Drain-source voltage: 60V Drain current: 44A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 22W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 |
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