Технічний опис AONS62618 Alpha & Omega Semiconductor
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V.
Інші пропозиції AONS62618
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| AONS62618 | Виробник : ALPHA & OMEGA SEMICONDUCTOR | AONS62618 SMD N channel transistors |
товару немає в наявності |
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AONS62618 | Виробник : Alpha & Omega Semiconductor |
 N-Channel MOSFET |
товару немає в наявності |
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| AONS62618 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V |
товару немає в наявності |