Технічний опис AONS62814T Alpha & Omega Semiconductor
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V, Power Dissipation (Max): 8.8W (Ta), 258W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V.
Інші пропозиції AONS62814T
| Фото | Назва | Виробник | Інформація |
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Ціна |
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| AONS62814T | Виробник : ALPHA & OMEGA SEMICONDUCTOR | AONS62814T THT N channel transistors |
товару немає в наявності |
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| AONS62814T | Виробник : Alpha & Omega Semiconductor |
 Single MV MOSFET |
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AONS62814T | Виробник : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 8.8W (Ta), 258W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V |
товару немає в наявності |