AONS62814T Alpha & Omega Semiconductor


aons62814t.pdf Виробник: Alpha & Omega Semiconductor
Single MV MOSFET
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Технічний опис AONS62814T Alpha & Omega Semiconductor

Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V, Power Dissipation (Max): 8.8W (Ta), 258W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V.

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AONS62814T Виробник : ALPHA & OMEGA SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 80V; 215A; Idm: 860A
Mounting: SMD
Case: DFN5x6
Gate charge: 68nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 129W
Drain current: 215A
Pulsed drain current: 860A
Technology: AlphaSGT™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
кількість в упаковці: 3000 шт
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AONS62814T Виробник : Alpha & Omega Semiconductor aons62814t.pdf Single MV MOSFET
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AONS62814T AONS62814T Виробник : Alpha & Omega Semiconductor Inc. Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 8.8W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V
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AONS62814T Виробник : ALPHA & OMEGA SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 80V; 215A; Idm: 860A
Mounting: SMD
Case: DFN5x6
Gate charge: 68nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 129W
Drain current: 215A
Pulsed drain current: 860A
Technology: AlphaSGT™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
товару немає в наявності
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