AONS66612T Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: 60V N-CHANNEL ALPHASGT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 105.70 грн |
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Технічний опис AONS66612T Alpha & Omega Semiconductor Inc.
Description: 60V N-CHANNEL ALPHASGT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V.
Інші пропозиції AONS66612T за ціною від 98.37 грн до 307.18 грн
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AONS66612T | Виробник : Alpha & Omega Semiconductor Inc. |
Description: 60V N-CHANNEL ALPHASGT Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V |
на замовлення 5937 шт: термін постачання 21-31 дні (днів) |
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| AONS66612T | Виробник : Alpha & Omega Semiconductor |
N Channel Trench Power MOSFET |
товару немає в наявності |
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| AONS66612T | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 275A; Idm: 900A Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 275A Pulsed drain current: 900A Power dissipation: 125W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 3000 шт |
товару немає в наявності |
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| AONS66612T | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 275A; Idm: 900A Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 275A Pulsed drain current: 900A Power dissipation: 125W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |