AONS66620 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 120.17 грн |
| 10+ | 73.49 грн |
| 25+ | 62.20 грн |
| 100+ | 46.38 грн |
| 250+ | 40.52 грн |
| 500+ | 36.94 грн |
| 1000+ | 33.39 грн |
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Технічний опис AONS66620 Alpha & Omega Semiconductor Inc.
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 36.5W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V.
Інші пропозиції AONS66620
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AONS66620 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
AONS66620 SMD N channel transistors |
товару немає в наявності |
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AONS66620 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 36.5W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V |
товару немає в наявності |