AONS66620

AONS66620 Alpha & Omega Semiconductor Inc.


AONS66620.pdf Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
на замовлення 2950 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.41 грн
10+76.09 грн
25+64.39 грн
100+48.02 грн
250+41.95 грн
500+38.24 грн
1000+34.57 грн
Мінімальне замовлення: 3
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Технічний опис AONS66620 Alpha & Omega Semiconductor Inc.

Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 36.5W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V.

Інші пропозиції AONS66620

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AONS66620 Виробник : ALPHA & OMEGA SEMICONDUCTOR AONS66620.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 24A; Idm: 85A; 14.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 14.5W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 85A
Technology: AlphaSGT™
Gate charge: 16nC
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику  од. на суму  грн.
AONS66620 AONS66620 Виробник : Alpha & Omega Semiconductor Inc. AONS66620.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
AONS66620 Виробник : ALPHA & OMEGA SEMICONDUCTOR AONS66620.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 24A; Idm: 85A; 14.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 14.5W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 85A
Technology: AlphaSGT™
Gate charge: 16nC
товару немає в наявності
В кошику  од. на суму  грн.