AONS66811 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
на замовлення 2530 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 259.60 грн |
| 10+ | 163.07 грн |
| 100+ | 113.76 грн |
| 500+ | 87.01 грн |
| 1000+ | 80.67 грн |
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Технічний опис AONS66811 Alpha & Omega Semiconductor Inc.
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V, Power Dissipation (Max): 7.5W (Ta), 258W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V.
Інші пропозиції AONS66811
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AONS66811 | Виробник : Alpha & Omega Semiconductor |
80V N-Channel AlphaSGT2 |
товару немає в наявності |
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| AONS66811 | Виробник : Alpha & Omega Semiconductor |
80V N-Channel AlphaSGT2 |
товару немає в наявності |
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| AONS66811 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 1148A; 182W; DFN5x6 Mounting: SMD Drain-source voltage: 80V Drain current: 287A On-state resistance: 2.1mΩ Type of transistor: N-MOSFET Power dissipation: 182W Polarisation: unipolar Kind of package: reel; tape Gate charge: 77nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1148A Case: DFN5x6 кількість в упаковці: 3000 шт |
товару немає в наявності |
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AONS66811 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V Power Dissipation (Max): 7.5W (Ta), 258W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V |
товару немає в наявності |
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| AONS66811 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 1148A; 182W; DFN5x6 Mounting: SMD Drain-source voltage: 80V Drain current: 287A On-state resistance: 2.1mΩ Type of transistor: N-MOSFET Power dissipation: 182W Polarisation: unipolar Kind of package: reel; tape Gate charge: 77nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1148A Case: DFN5x6 |
товару немає в наявності |