Технічний опис AONS66814 Alpha & Omega Semiconductor
Description: LINEAR IC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 310A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V, Power Dissipation (Max): 8.8W (Ta), 500W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 40 V.
Інші пропозиції AONS66814
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AONS66814 | Виробник : Alpha & Omega Semiconductor |
 Medium Voltage MOSFETs |
товару немає в наявності |
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| AONS66814 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 220A; Idm: 880A; 125W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 220A Pulsed drain current: 880A Power dissipation: 125W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 3000 шт |
товару немає в наявності |
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AONS66814 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 310A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 8.8W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 40 V |
товару немає в наявності |
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| AONS66814 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 220A; Idm: 880A; 125W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 220A Pulsed drain current: 880A Power dissipation: 125W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |