AONS66916 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
на замовлення 2752 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 350.95 грн |
| 10+ | 224.61 грн |
| 25+ | 195.08 грн |
| 100+ | 151.98 грн |
| 250+ | 136.88 грн |
| 500+ | 127.67 грн |
| 1000+ | 118.04 грн |
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Технічний опис AONS66916 Alpha & Omega Semiconductor Inc.
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 215W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V.
Інші пропозиції AONS66916
| Фото | Назва | Виробник | Інформація |
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AONS66916 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 30A 8-Pin DFN EP T/R |
товару немає в наявності |
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AONS66916 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 30A 8-Pin DFN EP T/R |
товару немає в наявності |
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AONS66916 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 86W; DFN5x6 Gate charge: 67nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: DFN5x6 Drain-source voltage: 100V Drain current: 100A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 86W Polarisation: unipolar кількість в упаковці: 3000 шт |
товару немає в наявності |
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AONS66916 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V |
товару немає в наявності |
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AONS66916 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 86W; DFN5x6 Gate charge: 67nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: DFN5x6 Drain-source voltage: 100V Drain current: 100A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 86W Polarisation: unipolar |
товару немає в наявності |