AONS66919 Alpha & Omega Semiconductor Inc.

Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
на замовлення 2745 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
2+ | 165.53 грн |
10+ | 101.85 грн |
25+ | 86.81 грн |
100+ | 65.54 грн |
250+ | 57.76 грн |
500+ | 53.02 грн |
1000+ | 48.27 грн |
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Технічний опис AONS66919 Alpha & Omega Semiconductor Inc.
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V.
Інші пропозиції AONS66919
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AONS66919 | Виробник : Alpha & Omega Semiconductor |
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товару немає в наявності |
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AONS66919 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
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товару немає в наявності |
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AONS66919 | Виробник : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V |
товару немає в наявності |