Технічний опис AONV110A60 Alpha & Omega Semiconductor
Description: N, Packaging: Tube, Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V, Power Dissipation (Max): 8.3W (Ta), 357W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 4-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V.
Інші пропозиції AONV110A60
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AONV110A60 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; Idm: 140A; 357W; DFN8x8 Mounting: SMD On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 357W Polarisation: unipolar Kind of package: reel; tape Gate charge: 72nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 140A Case: DFN8x8 Drain-source voltage: 600V Drain current: 35A кількість в упаковці: 3500 шт |
товару немає в наявності |
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| AONV110A60 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tube Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V Power Dissipation (Max): 8.3W (Ta), 357W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 4-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V |
товару немає в наявності |
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| AONV110A60 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; Idm: 140A; 357W; DFN8x8 Mounting: SMD On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 357W Polarisation: unipolar Kind of package: reel; tape Gate charge: 72nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 140A Case: DFN8x8 Drain-source voltage: 600V Drain current: 35A |
товару немає в наявності |