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AONX38320 Alpha & Omega Semiconductor

Виробник: Alpha & Omega Semiconductor
AONX38320

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Технічний опис AONX38320 Alpha & Omega Semiconductor

Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA, Supplier Device Package: 8-DFN (5x6).

Інші пропозиції AONX38320

Назва	Виробник	Інформація	Доступність	Ціна
AONX38320	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 42/147A; 9.6/29W; DFN5x6E Semiconductor structure: asymmetric Drain-source voltage: 30V Drain current: 42/147A On-state resistance: 5.3/1.02mΩ Type of transistor: N-MOSFET x2 Power dissipation: 9.6/29W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±16/±12V Mounting: SMD Case: DFN5x6E кількість в упаковці: 3000 шт	товару немає в наявності	В кошику од. на суму грн.
AONX38320	Виробник : Alpha & Omega Semiconductor Inc.	Description: N Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6)	товару немає в наявності	В кошику од. на суму грн.
AONX38320	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 42/147A; 9.6/29W; DFN5x6E Semiconductor structure: asymmetric Drain-source voltage: 30V Drain current: 42/147A On-state resistance: 5.3/1.02mΩ Type of transistor: N-MOSFET x2 Power dissipation: 9.6/29W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±16/±12V Mounting: SMD Case: DFN5x6E	товару немає в наявності	В кошику од. на суму грн.