AONY36356 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.48 грн |
| 10+ | 75.46 грн |
| 25+ | 63.99 грн |
| 100+ | 47.81 грн |
| 250+ | 41.84 грн |
| 500+ | 38.18 грн |
| 1000+ | 34.56 грн |
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Технічний опис AONY36356 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17.5A 8DFN, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції AONY36356
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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AONY36356 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 17.5A 8DFN Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| AONY36356 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.