
AOSD21311C Alpha & Omega Semiconductor Inc.

Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
3000+ | 16.23 грн |
6000+ | 15.20 грн |
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Технічний опис AOSD21311C Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V, Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції AOSD21311C за ціною від 19.91 грн до 77.19 грн
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AOSD21311C | Виробник : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 51745 шт: термін постачання 21-31 дні (днів) |
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AOSD21311C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.1W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -5A On-state resistance: 42mΩ Type of transistor: P-MOSFET x2 Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A кількість в упаковці: 1 шт |
товару немає в наявності |
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AOSD21311C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.1W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -5A On-state resistance: 42mΩ Type of transistor: P-MOSFET x2 Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A |
товару немає в наявності |