AOSD21313C Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 23.84 грн |
| 6000+ | 21.26 грн |
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Технічний опис AOSD21313C Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції AOSD21313C за ціною від 24.71 грн до 93.11 грн
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AOSD21313C | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 5.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 7712 шт: термін постачання 21-31 дні (днів) |
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| AOSD21313C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; Idm: -23A; 1.1W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -5.7A On-state resistance: 32mΩ Type of transistor: P-MOSFET x2 Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -23A кількість в упаковці: 1 шт |
товару немає в наявності |
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| AOSD21313C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; Idm: -23A; 1.1W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -5.7A On-state resistance: 32mΩ Type of transistor: P-MOSFET x2 Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -23A |
товару немає в наявності |