Технічний опис AOSP21307 Alpha & Omega Semiconductor
Description: MOSFET P-CH 30V 14A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V.
Інші пропозиції AOSP21307
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AOSP21307 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -11A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±25V кількість в упаковці: 1 шт |
товару немає в наявності |
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AOSP21307 | Виробник : Alpha & Omega Semiconductor |
P-Channel MOSFET |
товару немає в наявності |
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AOSP21307 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 14A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V |
товару немає в наявності |
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AOSP21307 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -11A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±25V |
товару немає в наявності |