AOSS32136C Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.25 грн |
| 6000+ | 7.22 грн |
| 9000+ | 6.85 грн |
| 15000+ | 6.04 грн |
| 21000+ | 5.81 грн |
| 30000+ | 5.59 грн |
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Технічний опис AOSS32136C Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 6.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, SOT-23-3 Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V.
Інші пропозиції AOSS32136C за ціною від 4.85 грн до 36.76 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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AOSS32136C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23 Mounting: SMD Drain current: 5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Case: SOT23 On-state resistance: 28mΩ Pulsed drain current: 38A Power dissipation: 0.8W Gate charge: 14nC Polarisation: unipolar |
на замовлення 4029 шт: термін постачання 14-30 дні (днів) |
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AOSS32136C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 6.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V |
на замовлення 71473 шт: термін постачання 21-31 дні (днів) |
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| AOSS32136C |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23
Mounting: SMD
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 28mΩ
Pulsed drain current: 38A
Power dissipation: 0.8W
Gate charge: 14nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23
Mounting: SMD
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 28mΩ
Pulsed drain current: 38A
Power dissipation: 0.8W
Gate charge: 14nC
Polarisation: unipolar
на замовлення 4029 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 11.90 грн |
| 62+ | 6.78 грн |
| 100+ | 6.11 грн |
| 500+ | 5.44 грн |
| 3000+ | 4.85 грн |
| AOSS32136C |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
на замовлення 71473 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.76 грн |
| 14+ | 22.07 грн |
| 100+ | 13.99 грн |
| 500+ | 9.86 грн |
| 1000+ | 8.80 грн |