Технічний опис AOT10B65MQ2 Alpha & Omega Semiconductor
Description: IGBT 10A, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 106 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 12ns/91ns, Switching Energy: 180µJ (on), 130µJ (off), Test Condition: 400V, 10A, 30Ohm, 15V, Gate Charge: 24 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 150 W.
Інші пропозиції AOT10B65MQ2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOT10B65MQ2 | Виробник : Alpha & Omega Semiconductor |
 Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode |
товару немає в наявності |
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| AOT10B65MQ2 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
AOT10B65MQ2 THT IGBT transistors |
товару немає в наявності |
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| AOT10B65MQ2 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 10A Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 12ns/91ns Switching Energy: 180µJ (on), 130µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W |
товару немає в наявності |