Технічний опис AOT15S60L Alpha & Omega Semiconductor
Description: MOSFET N-CH 600V 15A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V.
Інші пропозиції AOT15S60L
| Фото | Назва | Виробник | Інформація |
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AOT15S60L | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220 T/R |
товару немає в наявності |
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| AOT15S60L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
AOT15S60L THT N channel transistors |
товару немає в наявності |
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AOT15S60L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V |
товару немає в наявності |