AOT266L Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 18A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5650 pF @ 30 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 214.35 грн |
| 50+ | 103.01 грн |
| 100+ | 92.96 грн |
| 500+ | 70.72 грн |
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Технічний опис AOT266L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 18A/140A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 268W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5650 pF @ 30 V.
Інші пропозиції AOT266L за ціною від 167.86 грн до 227.30 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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AOT266L | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 134W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Case: TO220 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Kind of channel: enhancement Gate charge: 65nC Power dissipation: 134W |
на замовлення 54 шт: термін постачання 14-30 дні (днів) |
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| AOT266L |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 134W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 65nC
Power dissipation: 134W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 134W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 65nC
Power dissipation: 134W
на замовлення 54 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.30 грн |
| 3+ | 186.97 грн |
| 10+ | 167.86 грн |