AOT412 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 75W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 15.8mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
Power dissipation: 75W
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.65 грн |
| 6+ | 80.60 грн |
| 25+ | 73.12 грн |
| 100+ | 68.97 грн |
Відгуки про товар
Написати відгук
Технічний опис AOT412 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 8.2A/60A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V, Power Dissipation (Max): 2.6W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V.
Інші пропозиції AOT412
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AOT412 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 8.2A/60A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| AOT412 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 8.2A/60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
Description: MOSFET N-CH 100V 8.2A/60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.