AOT418L

Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9.5A/105A TO220
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube