Технічний опис AOT66811L Alpha & Omega Semiconductor
Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Power Dissipation (Max): 10W (Ta), 310W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V.
Інші пропозиції AOT66811L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOT66811L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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AOT66811L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 310W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V |
товару немає в наявності |
|
| AOT66811L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |