AOTF10T60P ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.6A; TO220F
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220F
On-state resistance: 0.7Ω
Mounting: THT
Gate charge: 26nC
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.91 грн |
| 9+ | 50.46 грн |
| 25+ | 47.15 грн |
Відгуки про товар
Написати відгук
Технічний опис AOTF10T60P ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 10A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V, Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V.
Інші пропозиції AOTF10T60P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AOTF10T60P | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 10A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
| AOTF10T60P |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
Description: MOSFET N-CH 600V 10A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.