AOTF20B65LN2 Alpha & Omega Semiconductor
Виробник: Alpha & Omega Semiconductor650V, 20A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode
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Технічний опис AOTF20B65LN2 Alpha & Omega Semiconductor
Description: 650V, 20A ALPHAIGBT TM WITH SOFT, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 266 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A, Supplier Device Package: TO-220F, Td (on/off) @ 25°C: 23ns/135ns, Switching Energy: 450µJ (on), 260µJ (off), Test Condition: 400V, 20A, 15Ohm, 15V, Gate Charge: 52 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 45 W.
Інші пропозиції AOTF20B65LN2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| AOTF20B65LN2 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
AOTF20B65LN2 THT IGBT transistors |
товару немає в наявності |
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AOTF20B65LN2 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: 650V, 20A ALPHAIGBT TM WITH SOFT Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 266 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 23ns/135ns Switching Energy: 450µJ (on), 260µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 52 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 45 W |
товару немає в наявності |