Технічний опис AOTF20N40L Alpha & Omega Semiconductor
Description: MOSFET N-CH 400V 20A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 250µA, Supplier Device Package: TO-220F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V.
Інші пропозиції AOTF20N40L
| Фото | Назва | Виробник | Інформація |
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AOTF20N40L | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 400V 20A 3-Pin(3+Tab) TO-220F |
товару немає в наявності |
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| AOTF20N40L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
AOTF20N40L THT N channel transistors |
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AOTF20N40L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 400V 20A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V |
товару немає в наявності |