AOTF25S65 AOS
Виробник: AOS
Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220F T/R Група товару: Транзистори Од. вим: шт
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Технічний опис AOTF25S65 AOS
Description: MOSFET N-CH 650V 25A TO220-3F, Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції AOTF25S65
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AOTF25S65 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 25A TO220-3F Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
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