Технічний опис AOTF2N60 AO
Description: MOSFET N-CH 600V 2A TO220-3F, Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 31W (Tc), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.
Інші пропозиції AOTF2N60
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
AOTF2N60 | Виробник : Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 600V 2A TO220-3FGate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
товару немає в наявності |