AOTL66215 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: TOLLA
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 305A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2000+ | 126.38 грн |
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Технічний опис AOTL66215 Alpha & Omega Semiconductor Inc.
Description: LINEAR IC, Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Supplier Device Package: TOLLA, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 10W (Ta), 500W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 305A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).