AOTL66810 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: DESC: MOSFET N-CH 80V 65A TOLLA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 425W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
на замовлення 1790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 541.19 грн |
| 10+ | 351.52 грн |
| 100+ | 255.65 грн |
| 500+ | 201.59 грн |
| 1000+ | 200.10 грн |
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Технічний опис AOTL66810 Alpha & Omega Semiconductor Inc.
Description: DESC: MOSFET N-CH 80V 65A TOLLA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 420A (Tc), Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V, Power Dissipation (Max): 10W (Ta), 425W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: TOLLA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V.
Інші пропозиції AOTL66810
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOTL66810 | Виробник : Alpha & Omega Semiconductor |
80V N-Channel Power MOSFET |
товару немає в наявності |
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| AOTL66810 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 80V; 420A; Idm: 1700A Mounting: SMD Drain-source voltage: 80V Drain current: 420A On-state resistance: 1.25mΩ Type of transistor: N-MOSFET Power dissipation: 210W Polarisation: unipolar Kind of package: reel; tape Gate charge: 175nC Technology: AlphaSGT™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1700A Case: TOLLA кількість в упаковці: 2000 шт |
товару немає в наявності |
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AOTL66810 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: DESC: MOSFET N-CH 80V 65A TOLLA Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 420A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 425W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TOLLA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
товару немає в наявності |
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| AOTL66810 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 80V; 420A; Idm: 1700A Mounting: SMD Drain-source voltage: 80V Drain current: 420A On-state resistance: 1.25mΩ Type of transistor: N-MOSFET Power dissipation: 210W Polarisation: unipolar Kind of package: reel; tape Gate charge: 175nC Technology: AlphaSGT™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1700A Case: TOLLA |
товару немає в наявності |