AOUS66923 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 16.5A ULTRASO-8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
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Технічний опис AOUS66923 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5A ULTRASO-8, Packaging: Tape & Reel (TR), Package / Case: 3-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: UltraSO-8™, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V.
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AOUS66923 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 16.5A ULTRASO-8 Packaging: Cut Tape (CT) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V |
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