Технічний опис APT10026JLL Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W, Type of module: MOSFET transistor, Case: ISOTOP, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 120A, Semiconductor structure: single transistor, Drain-source voltage: 1kV, Drain current: 30A, On-state resistance: 0.26Ω, Power dissipation: 595W, Polarisation: unipolar, Electrical mounting: screw, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APT10026JLL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT10026JLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.26Ω Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT10026JLL | Виробник : Microchip Technology | Discrete Semiconductor Modules MOSFET MOS7 1000 V 26 Ohm SOT-227 |
товар відсутній |
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| APT10026JLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.26Ω Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |