Технічний опис APT10026JLL Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W, Technology: POWER MOS 7®, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 30A, Pulsed drain current: 120A, Power dissipation: 595W, Case: ISOTOP, Gate-source voltage: ±30V, On-state resistance: 0.26Ω, Kind of package: tube, Kind of channel: enhancement, Semiconductor structure: single transistor, Mechanical mounting: screw, Electrical mounting: screw, Type of semiconductor module: MOSFET transistor, кількість в упаковці: 1 шт.
Інші пропозиції APT10026JLL
| Фото | Назва | Виробник | Інформація |
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Ціна |
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| APT10026JLL | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.26Ω Kind of package: tube Kind of channel: enhancement Semiconductor structure: single transistor Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor кількість в упаковці: 1 шт |
товару немає в наявності |
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APT10026JLL | Виробник : Microchip Technology |
Description: MOSFET N-CH 1000V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V |
товару немає в наявності |
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| APT10026JLL | Виробник : Microchip Technology |
MOSFET Modules MOSFET MOS7 1000 V 26 Ohm SOT-227 |
товару немає в наявності |
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| APT10026JLL | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.26Ω Kind of package: tube Kind of channel: enhancement Semiconductor structure: single transistor Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor |
товару немає в наявності |