Технічний опис APT10026L2LLG Microchip Technology
Description: MOSFET N-CH 1000V 38A 264 MAX, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: 264 MAX™ [L2], Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V.
Інші пропозиції APT10026L2LLG
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APT10026L2LLG | Виробник : Microchip Technology |
 Description: MOSFET N-CH 1000V 38A 264 MAXPackaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: 264 MAX™ [L2] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V |
товару немає в наявності |
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APT10026L2LLG | Виробник : Microchip Technology |
MOSFETs MOSFET MOS7 1000 V 26 Ohm TO-264 MAX |
товару немає в наявності |
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| APT10026L2LLG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 38A Pulsed drain current: 152A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |