APT10035B2FLLG MICROCHIP TECHNOLOGY

Description: MOSFET N-CH 1000V 28A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 25 V.