Технічний опис APT10035JFLL Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W, Type of module: MOSFET transistor, Case: ISOTOP, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 100A, Semiconductor structure: single transistor, Drain-source voltage: 1kV, Drain current: 25A, On-state resistance: 370mΩ, Power dissipation: 520W, Polarisation: unipolar, Electrical mounting: screw, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APT10035JFLL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT10035JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 25A On-state resistance: 370mΩ Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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| APT10035JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 25A On-state resistance: 370mΩ Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |