Технічний опис APT10035JFLL Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1kV, Drain current: 25A, Electrical mounting: screw, On-state resistance: 370mΩ, Pulsed drain current: 100A, Power dissipation: 520W, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Mechanical mounting: screw, Kind of package: tube, Kind of channel: enhancement, Case: ISOTOP, Polarisation: unipolar, кількість в упаковці: 1 шт.
Інші пропозиції APT10035JFLL
Фото | Назва | Виробник | Інформація |
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APT10035JFLL | Виробник : Microchip Technology |
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товару немає в наявності |
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APT10035JFLL | Виробник : MICROCHIP TECHNOLOGY |
![]() Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 25A Electrical mounting: screw On-state resistance: 370mΩ Pulsed drain current: 100A Power dissipation: 520W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw Kind of package: tube Kind of channel: enhancement Case: ISOTOP Polarisation: unipolar кількість в упаковці: 1 шт |
товару немає в наявності |
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APT10035JFLL | Виробник : Microchip Technology |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 25 V |
товару немає в наявності |
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APT10035JFLL | Виробник : MICROCHIP TECHNOLOGY |
![]() Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 25A Electrical mounting: screw On-state resistance: 370mΩ Pulsed drain current: 100A Power dissipation: 520W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw Kind of package: tube Kind of channel: enhancement Case: ISOTOP Polarisation: unipolar |
товару немає в наявності |