APT1003RKLLG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Case: TO220-3
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Case: TO220-3
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
кількість в упаковці: 1 шт
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Технічний опис APT1003RKLLG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3, Case: TO220-3, Mounting: THT, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 16A, Drain-source voltage: 1kV, Drain current: 4A, On-state resistance: 3Ω, Type of transistor: N-MOSFET, Power dissipation: 139W, Polarisation: unipolar, Gate charge: 34nC, кількість в упаковці: 1 шт.
Інші пропозиції APT1003RKLLG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APT1003RKLLG | Виробник : Microchip / Microsemi | Discrete Semiconductor Modules FG, MOSFET, 1000V, TO-220, RoHS |
товар відсутній |
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APT1003RKLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3 Case: TO220-3 Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC |
товар відсутній |