APT100GN120JDQ4 MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис APT100GN120JDQ4 MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B, Type of module: IGBT, Semiconductor structure: single transistor, Max. off-state voltage: 1.2kV, Collector current: 70A, Case: SOT227B, Application: for inductive load; for UPS; motors; SMPS, Electrical mounting: screw, Gate-emitter voltage: ±30V, Pulsed collector current: 300A, Technology: Field Stop; Trench, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APT100GN120JDQ4
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT100GN120JDQ4 | Виробник : MICROSEMI |
ISOTOP®/INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - COMBI кількість в упаковці: 1 шт |
товар відсутній |
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APT100GN120JDQ4 | Виробник : Microchip Technology | IGBT Modules FG, IGBT-COMBI, 600V, SOT-227 |
товар відсутній |
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APT100GN120JDQ4 | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 70A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 300A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |