APT100GT120JR Microchip Technology
Виробник: Microchip TechnologyDescription: IGBT MOD 1200V 123A 570W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 123 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 570 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
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Технічний опис APT100GT120JR Microchip Technology
Description: IGBT MOD 1200V 123A 570W ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: NPT, Current - Collector (Ic) (Max): 123 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 570 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V.
Інші пропозиції APT100GT120JR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT100GT120JR | Виробник : Microchip Technology |
IGBT Modules FG, IGBT, 1200V, 100A, SOT-227 |
товару немає в наявності |
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| APT100GT120JR | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 67A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Case: SOT227B Kind of package: tube Semiconductor structure: single transistor Type of semiconductor module: IGBT Electrical mounting: screw Technology: NPT; Thunderblot IGBT® |
товару немає в наявності |