Технічний опис APT100M50J Microchip Technology
Description: MOSFET N-CH 500V 103A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 103A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 75A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V.
Інші пропозиції APT100M50J
| Фото | Назва | Виробник | Інформація |
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| APT100M50J | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 490A Type of semiconductor module: MOSFET transistor кількість в упаковці: 1 шт |
товару немає в наявності |
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| APT100M50J | Виробник : MICROSEMI |
SOT227/POWER MOSFET - MOS8 APT100M50 кількість в упаковці: 1 шт |
товару немає в наявності |
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APT100M50J | Виробник : Microchip Technology |
Description: MOSFET N-CH 500V 103A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 75A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V |
товару немає в наявності |
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APT100M50J | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules FG, MOSFET, 500V, SOT-227 |
товару немає в наявності |
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APT100M50J | Виробник : Microchip Technology |
Discrete Semiconductor Modules FG, MOSFET, 500V, SOT-227 |
товару немає в наявності |
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| APT100M50J | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 490A Type of semiconductor module: MOSFET transistor |
товару немає в наявності |