Технічний опис APT11F80B Microsemi
Description: MOSFET N-CH 800V 12A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V, Power Dissipation (Max): 337W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V.
Інші пропозиції APT11F80B за ціною від 284.3 грн до 393.68 грн
| Фото | Назва | Виробник | Інформація |
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| APT11F80B | Виробник : Microchip Technology |
 MOSFET FREDFET MOS8 800 V 11 A TO-247 |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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APT11F80B | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 46A; 337W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 46A Power dissipation: 337W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 80nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT11F80B | Виробник : MICROSEMI |
TO247-3/11 A, 800 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET APT11F80 кількість в упаковці: 1 шт |
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APT11F80B | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V Power Dissipation (Max): 337W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V |
товар відсутній |
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APT11F80B | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 46A; 337W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 46A Power dissipation: 337W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 80nC Kind of channel: enhanced |
товар відсутній |