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APT11GF120BRDQ1G

APT11GF120BRDQ1G Microsemi Corporation

APT11GF120BRDQ1_G_.pdf
Виробник: Microsemi Corporation
Description: IGBT NPT 1200V 25A TO247
Power - Max: 156 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Gate Charge: 65 nC
Test Condition: 800V, 8A, 10Ohm, 15V
Switching Energy: 300µJ (on), 285µJ (off)
Td (on/off) @ 25°C: 7ns/100ns
IGBT Type: NPT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 60 шт
В кошику  од. на суму  грн.
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Технічний опис APT11GF120BRDQ1G Microsemi Corporation

Description: IGBT NPT 1200V 25A TO247, Power - Max: 156 W, Current - Collector Pulsed (Icm): 24 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 25 A, Gate Charge: 65 nC, Test Condition: 800V, 8A, 10Ohm, 15V, Switching Energy: 300µJ (on), 285µJ (off), Td (on/off) @ 25°C: 7ns/100ns, IGBT Type: NPT, Supplier Device Package: TO-247 [B], Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.