APT11N80BC3G Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET N-CH 800V 11A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 289.9 грн |
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Технічний опис APT11N80BC3G Microchip Technology
Description: MOSFET N-CH 800V 11A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 680µA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V.
Інші пропозиції APT11N80BC3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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APT11N80BC3G Код товару: 176617 |
Транзистори > Польові N-канальні |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 33A Power dissipation: 156W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 60nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT11N80BC3G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 33A Power dissipation: 156W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 60nC Kind of channel: enhanced |
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