APT12057B2LLG Microchip Technology
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2983.44 грн |
| 100+ | 2539.42 грн |
Відгуки про товар
Написати відгук
Технічний опис APT12057B2LLG Microchip Technology
Description: MOSFET N-CH 1200V 22A T-MAX, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V.
Інші пропозиції APT12057B2LLG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT12057B2LLG | Виробник : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Kind of package: tube Gate charge: 290nC Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 88A кількість в упаковці: 1 шт |
товару немає в наявності |
||
 |
APT12057B2LLG | Виробник : Microchip Technology |
Description: MOSFET N-CH 1200V 22A T-MAX Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V |
товару немає в наявності |
|
| APT12057B2LLG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Kind of package: tube Gate charge: 290nC Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 88A |
товару немає в наявності |