APT12057B2LLG Microchip Technology
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2751.61 грн |
| 10+ | 2565.97 грн |
| 25+ | 2199.10 грн |
| 100+ | 1990.67 грн |
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31-40 дні (днів)
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Технічний опис APT12057B2LLG Microchip Technology
Description: MOSFET N-CH 1200V 22A T-MAX, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V.
Інші пропозиції APT12057B2LLG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT12057B2LLG | Microchip Technology |
 Description: MOSFET N-CH 1200V 22A T-MAXPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
| APT12057B2LLG | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Pulsed drain current: 88A Power dissipation: 690W Gate charge: 290nC Polarisation: unipolar Technology: POWER MOS 7® Drain current: 22A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO247MAX On-state resistance: 570mΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| APT12057B2LLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 22A T-MAX
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Description: MOSFET N-CH 1200V 22A T-MAX
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APT12057B2LLG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Pulsed drain current: 88A
Power dissipation: 690W
Gate charge: 290nC
Polarisation: unipolar
Technology: POWER MOS 7®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247MAX
On-state resistance: 570mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Pulsed drain current: 88A
Power dissipation: 690W
Gate charge: 290nC
Polarisation: unipolar
Technology: POWER MOS 7®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247MAX
On-state resistance: 570mΩ
товару немає в наявності
В кошику
од. на суму грн.