APT12080LVRG Microchip Technology
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 16A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 8A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Description: MOSFET N-CH 1200V 16A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 8A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1785.59 грн |
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Технічний опис APT12080LVRG Microchip Technology
Description: MOSFET N-CH 1200V 16A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 8A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-264 (L), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V.
Інші пропозиції APT12080LVRG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT12080LVRG | Виробник : Microchip Technology | MOSFET MOS5 1200 V 80 Ohm TO-264 |
товар відсутній |
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APT12080LVRG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W Technology: POWER MOS 5® Mounting: THT Power dissipation: 520W Case: TO264 Polarisation: unipolar Gate charge: 485nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.8Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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| APT12080LVRG | Виробник : MICROSEMI |
Power MOS V is a new generation of high voltage N-Channel enhancement mode APT12080 кількість в упаковці: 1 шт |
товар відсутній |
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APT12080LVRG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W Technology: POWER MOS 5® Mounting: THT Power dissipation: 520W Case: TO264 Polarisation: unipolar Gate charge: 485nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.8Ω Type of transistor: N-MOSFET |
товар відсутній |